Hajmirzaheydarali, mohammadreza, . Sadeghipari, Meharnosh, Soleimani-Amiri, samana, Akbari, mahdi, Shahsafi, alireza, Hajhosseini, Hosen, Salehi, fhatama, Mohajerzadeh, shamsedin (2013). Gate decorated Field Effect Transistors for high sensitivity pH sensing. , 13(3), 29-34.
mohammadreza Hajmirzaheydarali; Meharnosh . Sadeghipari; samana Soleimani-Amiri; mahdi Akbari; alireza Shahsafi; Hosen Hajhosseini; fhatama Salehi; shamsedin Mohajerzadeh. "Gate decorated Field Effect Transistors for high sensitivity pH sensing". , 13, 3, 2013, 29-34.
Hajmirzaheydarali, mohammadreza, . Sadeghipari, Meharnosh, Soleimani-Amiri, samana, Akbari, mahdi, Shahsafi, alireza, Hajhosseini, Hosen, Salehi, fhatama, Mohajerzadeh, shamsedin (2013). 'Gate decorated Field Effect Transistors for high sensitivity pH sensing', , 13(3), pp. 29-34.
Hajmirzaheydarali, mohammadreza, . Sadeghipari, Meharnosh, Soleimani-Amiri, samana, Akbari, mahdi, Shahsafi, alireza, Hajhosseini, Hosen, Salehi, fhatama, Mohajerzadeh, shamsedin Gate decorated Field Effect Transistors for high sensitivity pH sensing. , 2013; 13(3): 29-34.

Gate decorated Field Effect Transistors for high sensitivity pH sensing

The Modares Journal of Electrical Engineering
Article 5, Volume 13, Issue 3, 2013, Pages 29-34    PDF (199.32 K)
Authors
mohammadreza Hajmirzaheydarali1; Meharnosh . Sadeghipari1; samana Soleimani-Amiri1; mahdi Akbari1; alireza Shahsafi2; Hosen Hajhosseini1; fhatama Salehi1; shamsedin Mohajerzadeh* 1
1Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
2Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran
Abstract
We present a micro/nano-machining process to introduce nanostructured poly-silicon layer on the gate region of the pH-sensitive field effect transistors. Decoration of the gate of the field effect transistors by nanostructures plays an important role to improve the sensitivity of the pH-sensitive FETs. Electron beam lithography was exploited to realize the poly-Si nanopillars on the gate surface. Comparison between different micro and nanostructures demonstrates the potential of nanopillars to be utilized on the gate of this device rather than micro-conical structures (different size and shapes) and vertically carbon nanotubes. A high sensitivity of 500 mV/pH has been achieved, through the incorporation of silicon based nanopillars.
Keywords
micro/nano-machining process; poly-Si nanostructure; pH-sensitive FET; nanopillar
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